phototransistors www .optoelectronics.perkinelmer.com 19 description phototransistors are photodiode-amplifier combinations integrated within a single silicon chip. these are combined to overcome the major fault of photodiodes: unity gain. many applications demand a greater output signal from the photodetector than can be generated by a photodiode alone. while the signal from a photodiode can always be amplified through use of an external op-amp or other circuitry, this approach is often not as practical or as cost-effective as the use of phototransistors. the phototransistor can be viewed as a photodiode whose output photocurrent is fed into the base of a conventional small-signal transistor . while not required for operation of the device as a photodetector, a base connection is often provided, allowing the designer the option of using base current to bias the transistor. the typical gain of a phototransistor can range from 100 to over 1500. phototransistors can be used as ambient-light detectors. when used with a controllable light source, typically an ired, they ar e often employed as the detector element for optoisolators and transmissive or reflective optical switches. all phototransistors are rohs compliant. features ? low-cost visible and near-ir p hotodetection ? available with gains from 100 t o over 1500 ? moderately fast response times ? available in a wide range of packages including epoxy-coated, transfer-molded, cast, hermetic packages, chip form and surface mounting technology ? usable with almost any visible or near-infrared light source such as ireds, neon, fluorescent, incandescent bulbs, lasers, flame sources, sunlight, etc. ? same general electrical characteristics as familiar signal transistors typical applications ?computer/business equipment ?write-protect control ? mar gin contr olsrinters ?industrial ? led light sourceight pens ? security systems ?safety shields ?consumer ? coin counters ? lottery card readers ? position sensorsoysticks ?remote controllersoys, appliances, audio/visual equipment ? gamesaser tag ? camera shutter control principle of operation phototransistors ar e solid-state light detectors that possess inter nal gain. they can be used to provide either an analog or digital output signal. datasheets available upon request. absolute maximum ratings max imum t emperatur es -25 to 80 c (cr10te, cr50te) storage and operating: -40c to 100 -40 c to 110 (vtt1015, vtt1016, vtt1017, vtt1115, vtt1116, and vtt1117) -40 to 85 c (vtt7222, vtt7223, vtt7225, vtt7122, vtt7123, and vtt7125) -40 to 70 c (vtt9002, vtt9003, vtt9102, and vtt9103) continuous power dissipation: 50 mw 100 mw (vtt9002, vtt9003, vtt9102, and vtt9103) 200 mw (cr10te, cr50te) 250 mw (vtt1015, vtt1016, vtt1017, vtt1115, vtt1116, and vtt1117) derate above 30: 0.71 mw/?c 2.5 mw/?c (vtt9002, vtt9003, vtt9102, and vtt9103) 3.12 mw/?c (vtt1015, vtt1016, vtt1017, vtt1115, vtt1116, and vtt1117) 0.91 mw/?c (vtt7122, vtt7123, vtt7125) maximum current: 25 ma 200 ma (vtt1015, vtt1016, vtt1017, vtt1115, vtt1116, and vtt1117) lead-soldering temperature: 260 (1.6 mm from case, 5 sec. max.) phototransistors
npn phototransistors 0.25", small area, high speed 0.04", medium area, high sensitivity 0.05", large area, high sensitivity 20 www .optoelectronics.perkinelmer.com light current dark current angular p art h fc (mw/cm 2 ) na v c e v b r(ceo) v b r(eco) v c e(sat) t r / t f r esponse n umber ma min. v c e = 5 v max. volts volts min. volts min. volts max. ?ec, typ. q 1/2 v tt1222wh 1 .9 100 (5) 10 20 50 6 0.25 2 ?0? vtt1223wh 1 .5 100 (5) 10 20 40 6 0.25 3 ?0? vtt1225h 4 100 (5) 100 10 30 5 0.25 1.5 ?? vtt1226h 7 .5 100 (5) 100 10 30 5 0.25 3 ?? vtt1227h 12 100 (5) 100 10 30 5 0.25 4 ?? v tt1322wh 0.8 1 00 (5) 10 20 50 6 0.25 2 ?0? v tt1323wh 1 100 (5) 10 20 40 6 0.25 3 ?0? v tt3122eh 1.2 100 (5) 100 20 40 6 0.25 2.5 ?? vtt3123eh 4 100 (5) 100 10 30 4 0.25 4 ?? vtt3323lah 2 20 (1) 100 10 30 5 0.25 3 ?0? vtt3324lah 4 20 (1) 100 10 30 5 0.25 4 10? vtt3325lah 6 20 (1) 100 10 30 5 0.25 5 10? vtt3423lah 1 20 (1) 100 10 30 5 0.25 3 10? vtt3424lah 2 20 (1) 100 10 30 5 0.25 4 10? vtt3425lah 3 20 (1) 100 10 30 5 0.25 5 10? vtt7122h 1 100 (5) 100 10 30 5 0.25 2 ?6? vtt7123h 2 100 (5) 100 10 30 5 0.25 2 ?6? vtt7125h 4.5 100 (5) 100 10 30 5 0.25 2 ?6? vtt7222h 0.9 100 (5) 100 10 30 5 0.25 2 ?6? vtt7223h 1.8 100 (5) 100 10 30 5 0.25 2 ?6? vtt7225h 4 100 (5) 100 10 30 5 0.25 4 ?6? .025x .025 npn phototransistors t echnical specification table key i c light current i ceo dark current h=0 v br(ceo) collector br eakdown i c =100 a, h=0 v br(eco) emitter br eakdown i e =100 a, h=0 v ce(sat) saturation voltage i c =1 ma, h=400 fc t r /t f rise/fall time i c =1 ma, r l =100 w electro-optical characteristics @ 25 light current dark current angular part h fc (mw/cm 2 )na v ce v br(ceo) v br(eco) v ce(sat) t r /t f response number ma min. v ce =5 v max. v olts v olts min. volts min. volts max. ?ec, typ. q 1/2 vtt1212h 2 20 (1) 100 10 30 5 0.25 4 ?0? vtt1214h 4 20 (1) 100 10 30 5 0.25 6 10? vtt1312h 1 20 (1) 100 10 30 5 0.25 4 ?0? vtt1314h 2.4 20 (1) 100 10 30 5 0.25 6 ?0? vtt9002h 2 100 (5) 100 10 30 6 0.55 4 ?0? vtt9003h 5 100 (5) 100 10 30 6 0.55 6 ?0? vtt9102h 6 100 (5) 100 5 30 4 0.55 6 ?2? vtt9103h 13 100 (5) 100 5 30 4 0.55 10 ?2? .04 x .04 npn phototransistors t echnical specification electro-optical characteristics @ 25 phototransistors clear t- 1 3/4 (5 mm) plastic package vtt1212 vtt1223w vtt1227 vtt1214 vtt1225 vt t1222w vtt1226 irt t-1 3/4 (5mm) plastic package vtt1322w vtt1312 vtt1323w vtt1314 coax hermetic (with case lead) vtt3122e vtt3123e clear long t- 1 (3 mm) plastic package vtt3323la vtt3324la vtt3325la irt long t- 1 (3 mm) plastic package vtt3423la vtt3424la vtt3425la molded, lensed lateral package vtt7122 vtt7123 vtt7125 irt molded, lensed lateral package vtt7222 vtt7223 vtt7225 clear epoxy to-106 ceramic package vtt9002 vtt9003 epoxy lensed to-106 ceramic package vtt9102 vtt9103
www .optoelectronics.perkinelmer.com 21 phototransistors light current dark current angular p art h fc (mw/cm 2 ) na v c e v b r(ceo) v b r(eco) v c e(sat) t r / t f r esponse n umber ma min. v c e = 5 v max. volts volts min. volts min. volts max. ?ec, typ. q 1/2 v tt1015h 0 .4 100 (5) 25 20 40 6 0.4 5 ?5? vtt1016h 1 100 (5) 25 20 30 6 0.4 5 ?5? vtt1017h 2 .5 100 (5) 25 10 20 4 0.4 8 ?5? vtt1115h 1 20 (1) 100 10 30 6 0.4 5 ?5? vtt1116h 2 20 (1) 100 10 30 4 0.4 8 ?5? v tt1117h 4 2 0 (1) 100 10 30 4 0.4 8 ?5? .05x .05 npn phototransistors t echnical specification to-46 flat window package vtt1015 vtt1016 vtt1017 to-46 lensed package vtt1115 vtt1116 vtt1117 table key i c light current i ceo d ark current h=0 v br(ceo) collector breakdown i c =100 ?, h=0 v br(eco) emitter breakdown i e =100 ?, h=0 v c e(sat) saturation v oltage i c =1 ma, h=400 fc t r /t f rise/fall time i c =1 ma, r l =100 w electro-optical characteristics @ 25 cr10te ? surface mounting device ? solid state ceramic chip ? high thermal conductivity ? special type (cr10te-dlf) with daylight filter on request p e ak sensitivity dark a ctive rise/fall p art s pectral wavelength vce p-current current area time n umber package* range (nm) (v) (na) (mm 2 ) orientation cr10te c eramic 4 00C070 850 40 3 400 0.19 10/10 high vce smd (a1) cr50te ceramic 400C070 850 40 3 400 0.19 10/10 high vce smd (a2) i t echnical specification * all packages are listed on our website.
|
